VCSEL with antiguide current confinement layer
文献类型：专利
| 作者 | HWANG, WEN-YEN; ANSELM, KLAUS ALEXANDER; ZHENG, JUN |
| 发表日期 | 2003-10-02 |
| 专利号 | US20030185267A1 |
| 著作权人 | APPLIED OPTOELECTRONICS, INC. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | VCSEL with antiguide current confinement layer |
| 英文摘要 | A surface-emitting laser, such as a VCSEL, for generating single-transverse mode laser light at a lasing wavelength, has a first mirror and a second mirror positioned so as to define a laser cavity therebetween, and a semiconductor active region disposed between the first and second mirrors for amplifying, by stimulated emission, light in the laser cavity at the lasing wavelength. An annular antiguide structure is disposed within the laser cavity and between the active region and one of the first and second mirrors, the annular antiguide structure comprising an antiguide material and having a central opening, the central opening comprising a second material having an index of refraction for light at the lasing wavelength smaller than that of the antiguide material, whereby the annular antiguide structure causes preferential antiguiding of higher order transverse lasing modes in the laser cavity. |
| 公开日期 | 2003-10-02 |
| 申请日期 | 2002-03-28 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/66710]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | APPLIED OPTOELECTRONICS, INC. |
| 推荐引用方式 GB/T 7714 | HWANG, WEN-YEN,ANSELM, KLAUS ALEXANDER,ZHENG, JUN. VCSEL with antiguide current confinement layer. US20030185267A1. 2003-10-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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