Vcsel device and method for fabricating vcsel device
文献类型:专利
作者 | SAKAMOTO, AKIRA; MIYAMOTO, YASUAKI; SAKURAI, JUN |
发表日期 | 2009-04-16 |
专利号 | US20090097517A1 |
著作权人 | FUJI XEROX CO., LTD. |
国家 | 美国 |
文献子类 | 发明申请 |
其他题名 | Vcsel device and method for fabricating vcsel device |
英文摘要 | Provided is a VCSEL device that includes a substrate on which at least a first semiconductor multilayer film of a first conductivity type, an active region, and a second semiconductor multilayer film of a second conductivity type are stacked. The second semiconductor multilayer film forms a resonator together with the first semiconductor multilayer film. A conductive first protecting layer is formed in an area in the second semiconductor multilayer film. The area includes at least an emission outlet that emits laser light. An annular electrode is formed on the first protecting layer, and the emission outlet is formed in the annular electrode. An encapsulating material encapsulates at least the first protecting layer and the annular electrode. |
公开日期 | 2009-04-16 |
申请日期 | 2008-05-12 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/66802] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | FUJI XEROX CO., LTD. |
推荐引用方式 GB/T 7714 | SAKAMOTO, AKIRA,MIYAMOTO, YASUAKI,SAKURAI, JUN. Vcsel device and method for fabricating vcsel device. US20090097517A1. 2009-04-16. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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