Electrically pumped long-wavelength vcsel and methods of fabrication
文献类型：专利
| 作者 | CHENG, JULIAN; JIANG, WENBIN; LEE, HSING-CHUNG; SHIEH, CHAN-LONG |
| 发表日期 | 2003-06-30 |
| 专利号 | AU2002360341A1 |
| 著作权人 | CHENG, JULIAN |
| 国家 | 澳大利亚 |
| 文献子类 | 发明申请 |
| 其他题名 | Electrically pumped long-wavelength vcsel and methods of fabrication |
| 英文摘要 | A method of fabricating a vertical cavity surface emitting laser comprising the steps of epitaxially growing a first DBR (104) positioned on a substrate (102) wherein the first DBR is epitaxially grown using MOCVD. The substrate is orientated in an off-axis crystallographic direction which increases the radiative efficiency. A first cladding layer (106) is positioned on the first DBR and to an active region (108) is epitaxially grown on the first cladding layer wherein the active region is epitaxially grown using plasma assisted MBE. A second DBR (112) is epitaxially grown on the second cladding layer (110) wherein the second DBR is epitaxially grown using MOCVD. The active region is epitaxially grown using plasma assisted MBE to increase the mole fraction of nitrogen "N" incorporation. The DBR's are grown using MOCVD to improve the electrical performance. |
| 公开日期 | 2003-06-30 |
| 申请日期 | 2002-11-05 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/66957]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CHENG, JULIAN |
| 推荐引用方式 GB/T 7714 | CHENG, JULIAN,JIANG, WENBIN,LEE, HSING-CHUNG,et al. Electrically pumped long-wavelength vcsel and methods of fabrication. AU2002360341A1. 2003-06-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。