Semiconductor laser device with a plurality of active layers
文献类型：专利
| 作者 | SUZUKI KATSUHIRO; YAJIMA HIROYOSHI; SHIMADA JUNICHI; SHIMOYAMA KENJI; GOTO HIDEKI |
| 发表日期 | 1990-06-04 |
| 专利号 | JP1990144983A |
| 著作权人 | AGENCY OF IND SCIENCE & TECHNOL |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device with a plurality of active layers |
| 英文摘要 | PURPOSE:To enable large area light emission by dividing the active layer into small parts so that a plurality of layers are provided, with area per layer being the same as in the past, and making the total thickness of the active layers larger. CONSTITUTION:A semi-insulating AlGaAs clad layer 125 is formed on a substrate 127, and active layers 119, 121, 123 sandwiched between P-type clad layers 111, 115 and N-type clad layers 113, 117 are further laminated thereon. A semi-insulating AlGaAs clad layer 109 is formed on these layers 119, 121, 123, and a P-type clad layer 105 and an N-type clad layer 107 are buried and formed on the left and right sides thereof, and electrodes 101, 103 are formed on the P-type clad layer 105 and the N-type clad layer 107. In this construction, when a current is caused to flow between the (+) electrode 101 and the (-) electrode 103, positive holes and electrons are injected into respective active layers with small energy band gap from the upper and lower clad layers and right and left clad layers. Accordingly, electrons and positive holes are injected into the respective active layers over a wide area. Thus, high carrier density per active layer can be maintained and large area light emission is possible without lowering the light emission efficiency. |
| 公开日期 | 1990-06-04 |
| 申请日期 | 1988-11-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67082]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AGENCY OF IND SCIENCE & TECHNOL |
| 推荐引用方式 GB/T 7714 | SUZUKI KATSUHIRO,YAJIMA HIROYOSHI,SHIMADA JUNICHI,et al. Semiconductor laser device with a plurality of active layers. JP1990144983A. 1990-06-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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