Purification of indium solution and vapor phase epitaxial growth
文献类型：专利
| 作者 | KONDOU SUSUMU; NAGAI HARUO; AMANO TOSHIMASA |
| 发表日期 | 1984-09-12 |
| 专利号 | JP1984161814A |
| 著作权人 | NIPPON DENSHIN DENWA KOSHA |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Purification of indium solution and vapor phase epitaxial growth |
| 英文摘要 | PURPOSE:To obtain a thin film of high purity while reducing the time of thermal treatment by a method wherein, when liquid phase epitaxial growth of InP, InGaAs and InGaAsP group crystal is performed using In as a solvent while Al is added to In solution, mainly composed of In, and the thin film is grown by thermal fusion. CONSTITUTION:Al is very difficult to be mixed with In even at the high temperature of 600-800 deg.C and easy to be coupled with O2 and other impurities in In solution at the high temperature. The characteristics of Al like this are utilized. When Al is added to In solution, composed of In as a solvent, Al does not dissolve in this solution and, on the other hand, targets the impurities such as oxygen and sulphur in the solution regardless of the composition of the deposited crystal. Therefore, as compared to the conventional method with which the raw material for thin film growth solution is subjected to the high temperature thermal treatment in vacuum or in a highly pure hydrogen atmosphere for a long period, the thermal treatment period can be markedly reduced and an InGaAs thin film of high purity can be obtained. |
| 公开日期 | 1984-09-12 |
| 申请日期 | 1983-03-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67100]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON DENSHIN DENWA KOSHA |
| 推荐引用方式 GB/T 7714 | KONDOU SUSUMU,NAGAI HARUO,AMANO TOSHIMASA. Purification of indium solution and vapor phase epitaxial growth. JP1984161814A. 1984-09-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。