Distribution feedback construction semiconductor laser
文献类型：专利
| 作者 | MOTOSUGI TSUNEJI; MATSUOKA TAKASHI; ITAYA YOSHIO; YOSHIKUNI YUZO |
| 发表日期 | 1987-05-02 |
| 专利号 | JP1987095886A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Distribution feedback construction semiconductor laser |
| 英文摘要 | PURPOSE:To enable effective use of the light outputs coming from two output faces by moving a phase inversion position from the center of a resonator. CONSTITUTION:A distribution feedback construction semiconductor laser consists of a phase inversion diffraction grating 1, a reflectionless layer 3, an active layer 4, a waveguide layer 5 and a clad layer 6. In the semiconductor laser of such a construction, the phase inversion part 2 of a diffraction grating 1 is provided at a position 0.5<(x/L)<=0.72. Such a construction can make the light output intensity from two output faces asymmetric and oscillate a stable single longitudinal mode. Accordingly, for example, the light from the two output faces of the semiconductor laser can effectively be used by using the high output face for transmission by facing to an optical fiber and the low output face for light intensity monitoring. |
| 公开日期 | 1987-05-02 |
| 申请日期 | 1985-10-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67115]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | MOTOSUGI TSUNEJI,MATSUOKA TAKASHI,ITAYA YOSHIO,et al. Distribution feedback construction semiconductor laser. JP1987095886A. 1987-05-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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