Manufacture of compound semiconductor substrate
文献类型：专利
| 作者 | KINOSHITA HIDEAKI |
| 发表日期 | 1986-01-28 |
| 专利号 | JP1986019120A |
| 著作权人 | TOSHIBA KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of compound semiconductor substrate |
| 英文摘要 | PURPOSE:To provide the interfaces between growing layers comprising different compositions with excellent steepness by a method wherein the growing speed is controlled by means of changing flow rate of organic and metallic gas while keeping the overall gas flow rate in a reactor constant. CONSTITUTION:An n type GaAs substrate 31 is placed on a susceptor to produce a compound semiconductor substrate by means of heating the susceptor using high frequency coils 3. In such a production process, layer growing speed may be controlled by means of reducing the flow rate of organic and metallic gas and AsH3 gas to decelerate the epitaxial growing speed while keeping the overall gas flow rate constant near the interfaces between growing layers comprising different compositions i.e. between an n type GaAs buffer layer 32 and an n type Ga1-xAlxAs clad layer 33 as well as between a p type Ga1-xAlxAs clad layer 35 and a p type GaAs cap layer 36 etc. Through these procedures, the interfaces between growing layers may be provided with excellent steepness. Besides as for the substrate 31, II-VI group compound semiconductor substrates may be applicable in addition to GaAs substrates (III-V groups). |
| 公开日期 | 1986-01-28 |
| 申请日期 | 1984-07-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67133]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA KK |
| 推荐引用方式 GB/T 7714 | KINOSHITA HIDEAKI. Manufacture of compound semiconductor substrate. JP1986019120A. 1986-01-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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