Electrode structure of heat sink for photosemiconductor
文献类型：专利
| 作者 | OTSUKA NAOTAKA |
| 发表日期 | 1987-06-03 |
| 专利号 | JP1987122157A |
| 著作权人 | SHARP CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Electrode structure of heat sink for photosemiconductor |
| 英文摘要 | PURPOSE:To avoid any peeled off diebonding also reducing the heat resistance while improving the leakage property of photosemiconductor chip during diebonding process by coating Ni plated layer on a heat sink with Au plated layer of a specific thickness. CONSTITUTION:An Au plated layer 11 is further formed on an Ni plated layer 4. The Au plated layer 11 is coated with a film 0.05-0.5mum thick on overall surface of a heat sink A chip 3 of semiconductor laser etc. is diebonded on the upper part of heat sink 1 through the intermediary of a brazing material 2 such as In or AuSi etc. Through these procedures, the adhesive property of Ni plated layer 4 and Au plated layer 11 is strong making the formation of conventional Mo layer 5 unnecessary. Furthermore, the Au plated layer 11 can be provided with acceptable reliability and performance by forming it with thickness of 0.05-0.5mum. |
| 公开日期 | 1987-06-03 |
| 申请日期 | 1985-11-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67137]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP CORP |
| 推荐引用方式 GB/T 7714 | OTSUKA NAOTAKA. Electrode structure of heat sink for photosemiconductor. JP1987122157A. 1987-06-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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