A visible light semiconductor laser with (AlxGa1-x)0.5In0.5P crystal layers and a process for growing an (AlxGa1-x)0.5In0.5P crystal
文献类型：专利
| 作者 | GOMYO, AKIKO C/O NEC CORPORATION |
| 发表日期 | 1990-06-20 |
| 专利号 | EP0325275A3 |
| 著作权人 | NEC CORPORATION |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | A visible light semiconductor laser with (AlxGa1-x)0.5In0.5P crystal layers and a process for growing an (AlxGa1-x)0.5In0.5P crystal |
| 英文摘要 | In a visible light semiconductor laser with (AlxGa1-x)0.5In0.5P (0 ≦ x ≦ 1) crystal layers (52, 54) and a process for growing an(AlxGa1-x)0.5In0.5P (0 ≦ x ≦ 1) crystal, a GaAs substrate (51) on which (AlxGa1-x)0.5In0.5P is grown in an epitaxial method selected from MOVPE and MBE provides one selected from a (110) plane, a plane equivalent to the (110) plane, a (111) plane, and a plane equivalent to the (111) plane as a main plane for a crystal growth of (AlxGa1-x)0.5In0.5P. As a result, a bandgap energy Eg of the (AlxGa1-x)0.5In0.5P crystal can be the maximum value inherent to the mixed crystal independent on a growth temperature and a V/III ratio. |
| 公开日期 | 1990-06-20 |
| 申请日期 | 1989-01-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67142]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORPORATION |
| 推荐引用方式 GB/T 7714 | GOMYO, AKIKO C/O NEC CORPORATION. A visible light semiconductor laser with (AlxGa1-x)0.5In0.5P crystal layers and a process for growing an (AlxGa1-x)0.5In0.5P crystal. EP0325275A3. 1990-06-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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