Production method of iii nitride compound semiconductor, and iii nitride compound semiconductor element based on it
文献类型：专利
| 作者 | NAGAI, SEIJI; TOMITA, KAZUYOSHI; KODAMA, MASAHITO |
| 发表日期 | 2002-10-10 |
| 专利号 | WO2002080243A1 |
| 著作权人 | TOYODA GOSEI CO., LTD. |
| 国家 | 世界知识产权组织 |
| 文献子类 | 发明申请 |
| 其他题名 | Production method of iii nitride compound semiconductor, and iii nitride compound semiconductor element based on it |
| 英文摘要 | A production method of III nitride compound semiconductor, comprising the step of forming in an insular shape a first mask (41m) on a base layer (31), the step of forming a growth space ensuring material (5s) for ensuring a space for epitaxially growing a III nitride compound semiconductor, the step of forming a second mask (42m) so that the base layer (31) is almost entirely covered with the first mask (41m) and the second mask (42m) from the vertically above, the step of removing the growth space ensuring material (5s), and the step of epitaxially growing a III nitride compound semiconductor (32) longitudinally and laterally through the growth space. The III nitride compound semiconductor restricted in penetration dislocation is produced with a step switching limited to two times. |
| 公开日期 | 2002-10-10 |
| 申请日期 | 2002-03-19 |
| 状态 | 未确认 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67150]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOYODA GOSEI CO., LTD. |
| 推荐引用方式 GB/T 7714 | NAGAI, SEIJI,TOMITA, KAZUYOSHI,KODAMA, MASAHITO. Production method of iii nitride compound semiconductor, and iii nitride compound semiconductor element based on it. WO2002080243A1. 2002-10-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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