Manufacture of semiconductor device, semiconductor laser device and manufacture thereof
文献类型：专利
| 作者 | ANAYAMA CHIKASHI; TANAHASHI TOSHIYUKI; FURUYA AKIRA |
| 发表日期 | 1992-03-09 |
| 专利号 | JP1992073987A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor device, semiconductor laser device and manufacture thereof |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser having a lateral mode control type and high output by extending a mask in an overhang state above the side of a step, and forming a buried layer in a recess state near the side of the step. CONSTITUTION:An undoped GaAs current block layer 12 is epitaxially grown on a p-type GaAs substrate 10, an SiO2 film 30 is formed, a stripelike opening is formed, with the film 30 as a mask the layer 12 is etched to form a stripelike groove reaching a p-type GaAs substrate 10. Then, with the film 30 as a selectively growing mask an Mg-doped p-type GaAs is selectively grown on the substrate 10 and the layer 12 to bury the groove, thereby forming a p-type GaAs buried layer 14. Its sectional shape has a flat shape on the upper surface at the center and a recess state on the upper surface of the end of the side of the groove. Then, the film 30 is removed by etching. |
| 公开日期 | 1992-03-09 |
| 申请日期 | 1990-07-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67157]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | ANAYAMA CHIKASHI,TANAHASHI TOSHIYUKI,FURUYA AKIRA. Manufacture of semiconductor device, semiconductor laser device and manufacture thereof. JP1992073987A. 1992-03-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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