Manufacture of semiconductor laminated construction
文献类型：专利
| 作者 | NAKAMURA HITOSHI; MINAGAWA SHIGEKAZU; ITOU KAZUHIRO |
| 发表日期 | 1985-03-26 |
| 专利号 | JP1985053011A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laminated construction |
| 英文摘要 | PURPOSE:To enable obtaining a good quality hetero epitaxial multilayer which includes GaAlAs and InGaP in good reproducibility and producing a light emitting device such as visible light emitting semiconductor laser by forming a semiconductor layer which is to be grown using an In solusion by a vapor phase epitaxy process immediately after LPE (liquid phase epitaxy) growth using a Ga solusion. CONSTITUTION:On a GaAs substrate 11, a GaAlAs layer 12 is grown by an LPE process. Then, the crystal is taken out of an electric furnace and an InGaP layer 13 is grown by an MOCVD or MBE process. Later, a GaAlAs layer 14 is grown as necessary again by the LPE process. If forming of the InGaP layer 13 is again required on the GaAlAs, the above-mentioned processes are repeated. The obtained GaAlAs/InGaP/GaAlAs hetero multilayer crystal is excellent in flatness and mirror effect, the interface which does not include such as Ga or In is plain and is a good crystal. |
| 公开日期 | 1985-03-26 |
| 申请日期 | 1983-09-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67158]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | NAKAMURA HITOSHI,MINAGAWA SHIGEKAZU,ITOU KAZUHIRO. Manufacture of semiconductor laminated construction. JP1985053011A. 1985-03-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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