A method of producing a gallium nitride-type light emitting semiconductor device
文献类型：专利
| 作者 | MOTOKI, KENSAKU |
| 发表日期 | 2007-07-04 |
| 专利号 | EP1804305A1 |
| 著作权人 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | A method of producing a gallium nitride-type light emitting semiconductor device |
| 英文摘要 | A method of producing a gallium nitride-type light emitting semiconductor device comprising the steps of growing GaN-type semiconductor epitaxial layers on a (0001) top surface gallium nitride single crystal substrate; forming an electrode on the GaN-type semiconductor epitaxial layers; forming an electrode on a bottom surface of the gallium nitride single crystal substrate; forming scribing lines on the bottom surface of the gallium nitride single crystal substrate along {1-100} planes of the gallium nitride single crystal substrate; cutting the gallium nitride single crystal substrate into chips by cleaving along the scribed lines and obtaining light emitting device chips having sides consisting of {1-100} planes made by natural cleavage. |
| 公开日期 | 2007-07-04 |
| 申请日期 | 1999-05-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67159]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 推荐引用方式 GB/T 7714 | MOTOKI, KENSAKU. A method of producing a gallium nitride-type light emitting semiconductor device. EP1804305A1. 2007-07-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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