Molecular-beam epitaxial growth device
文献类型：专利
| 作者 | MIURA SHUICHI |
| 发表日期 | 1986-12-09 |
| 专利号 | JP1986278130A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Molecular-beam epitaxial growth device |
| 英文摘要 | PURPOSE:To prepare field-effect type transistor having high gains by installing a substrate holder, in which the mounting surface of a substrate is formed with an inclination except 90 deg. to an axis of rotation, and a molecular-beam cell mounted at a position where the state not faced oppositely to the revolving substrate is generated with time. CONSTITUTION:A substrate holder 2 in which the mounting surface 2A of a substrate 9 is shaped with an inclination except 90 deg. to an axis of rotation is fitted, and molecular-beam cells 6-8, etc. are set up at positions where the state not faced oppositely to the revolving substrate 9 is generated with time. Since a semiconductor crystal film remarkably thinner than conventional devices is grown or modulation doping having extremely short periods can be conducted, the method is suitable when superlattice structure at short periods must be acquired. Since semiconductor crystal films having different film thickness according to regions can be realized by one-time growth under a controlled state, the method is effective when manufacturing a multi-wavelength integrated semiconductor laser. |
| 公开日期 | 1986-12-09 |
| 申请日期 | 1985-06-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67162]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | MIURA SHUICHI. Molecular-beam epitaxial growth device. JP1986278130A. 1986-12-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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