Surface-emitting semiconductor laser, method for producing the same, surface-emitting semiconductor laser device, optical transmission device, and information processing device
文献类型：专利
| 作者 | TAKEDA, KAZUTAKA; HAYAKAWA, JUNICHIRO; MURAKAMI, AKEMI; JOGAN, NAOKI; KONDO, TAKASHI; SAKURAI, JUN |
| 发表日期 | 2016-03-03 |
| 专利号 | US20160064900A1 |
| 著作权人 | FUJI XEROX CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Surface-emitting semiconductor laser, method for producing the same, surface-emitting semiconductor laser device, optical transmission device, and information processing device |
| 英文摘要 | A surface-emitting semiconductor laser includes a first semiconductor multilayer film reflector, an active region, a second semiconductor multilayer film reflector, and a current confinement layer including an oxidized region formed by selective oxidation. The current confinement layer includes a first semiconductor layer having a relatively high Al content, a second semiconductor layer that is adjacent to the first semiconductor layer on an active-region side of the first semiconductor layer and has a lower Al content than the first semiconductor layer, and a composition-gradient layer adjacent to the first semiconductor layer on a side of the first semiconductor layer which is opposite to the active-region side. A portion of the composition-gradient layer which faces the first semiconductor layer has a lower Al content than the first semiconductor layer. |
| 公开日期 | 2016-03-03 |
| 申请日期 | 2015-07-28 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67163]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJI XEROX CO., LTD. |
| 推荐引用方式 GB/T 7714 | TAKEDA, KAZUTAKA,HAYAKAWA, JUNICHIRO,MURAKAMI, AKEMI,et al. Surface-emitting semiconductor laser, method for producing the same, surface-emitting semiconductor laser device, optical transmission device, and information processing device. US20160064900A1. 2016-03-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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