Buried-type semiconductor laser and manufacture of the same
文献类型：专利
| 作者 | KATOU YOSHITAKE |
| 发表日期 | 1989-07-12 |
| 专利号 | JP1989175792A |
| 著作权人 | 日本電気株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Buried-type semiconductor laser and manufacture of the same |
| 英文摘要 | PURPOSE:To assure the title semiconductor laser which is capable of oscillating with high efficiency and of being modulated at a high speed and which has a structure of high productivity by constructing the structure such that the interiors of grooves which hold an active region are formed as current blocking layers each comprising a semi-insulating semiconductor, and the sides and bottoms of grooves are formed as a specific faces. CONSTITUTION:The title semiconductor laser, a buried type parallel to the waveguide direction (011) of light has a double heterostructure on the (100) plane of the semiconductor substrate 17, in which structure an active region 15 is held between cladding layers 16, 14 with smaller refractive index and larger forbidden band than those of said active region 15. In addition, in the semiconductor laser, the active region 15 is positioned in a block held by the two grooves and each of said grooves forms a current block layer 19 of a semi-insulating semiconductor. The side surface of the groove in the upper part of the active region 15 includes a (111) A plane, and the side surface of the groove in the lower part of the active region 15 includes one crystal plane, and further the bottom surface of the groove part includes a (100) plane. For example, said crystal plane is any one of (111) B, (21), (12), and (01) planes. |
| 公开日期 | 1989-07-12 |
| 申请日期 | 1987-12-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67164]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電気株式会社 |
| 推荐引用方式 GB/T 7714 | KATOU YOSHITAKE. Buried-type semiconductor laser and manufacture of the same. JP1989175792A. 1989-07-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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