Integrated element of photo semiconductor and its manufacture
文献类型：专利
| 作者 | YANASE TOMOO; USUI AKIRA |
| 发表日期 | 1987-09-26 |
| 专利号 | JP1987219590A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Integrated element of photo semiconductor and its manufacture |
| 英文摘要 | PURPOSE:To obtain an integrated element of photo semiconductor wherein a leak current between adjacent photo semiconductor elements is small, by forming an epitaxial layer of high resistivity possessing a wave guide structure between photo semiconductor elements. CONSTITUTION:A semiconductor laser 11 and a photo detector 12 are formed on an n-InP substrate 20, and a coupling waveguide part 13 composed of a high resistive epitaxial layer are formed between the semiconductor laser 11 and the photo detector 12. Therefore a signal voltage of about +2V applied to the semiconductor laser and a voltage of about -6V applied to the photo detector 12 are separated with each other, so that a leak current does not flow. As for the coupling waveguide part 13, is waveguide is constituted of an InP layer 22 of low reflectivity and an InGaAsP layer 23 of high reflectivity so that the laser light emitted from the semiconductor laser is coupled to the photo detector 12 with low loss. |
| 公开日期 | 1987-09-26 |
| 申请日期 | 1986-03-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67168]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | YANASE TOMOO,USUI AKIRA. Integrated element of photo semiconductor and its manufacture. JP1987219590A. 1987-09-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。