Semiconductor light emission element and driving of same
文献类型：专利
| 作者 | TAKADA KAZUMASA; NODA JUICHI; OKAMOTO KATSUNARI |
| 发表日期 | 1987-02-24 |
| 专利号 | JP1987042586A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emission element and driving of same |
| 英文摘要 | PURPOSE:To obtain incoherent light emission with high luminance by a method wherein the length of a resonator is extended and an electrode is provided on a part of an emission end and the phases of vertical modes are varied by the temperature variation of an activation layer created by the application of a predetermined pulse current. CONSTITUTION:P-type InP epitaxial layers 2 and 4, an In(x)Ga(1-x)As(y)P(1-y) activation layer 5 and an In(x')Ga(1-x')As(y')P(1-y') cap layer are laminated on a P-type InP substrate 1 and a negative electrode 8 is partially provided on the side of an oscillation surface. The length of a resonator is so determined as to be 2-3 times of the optimal resonator length at which the threshold current is lowest. A pulse current I with a pulse width DELTAt and a pulse interval to (wherein DELTAt/to<0.1) is injected through the electrodes 9 and 8 to vary the temperature T of an activation layer. As the length of the resonator is long, the light intensity of a basic vertical mode is reduced and the number of vertical modes is increased. As non-emission range is large,a threshold current becomes large. Moreover, as the interval DELTAlambda of the modes becomes small, shifts of the vertical modes and phase variations of respective modes are induced and spectra become continuous to produce an output light with low coherency so that intensity of the light inputted into a single mode optical fiber can be increased. |
| 公开日期 | 1987-02-24 |
| 申请日期 | 1985-08-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67173]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | TAKADA KAZUMASA,NODA JUICHI,OKAMOTO KATSUNARI. Semiconductor light emission element and driving of same. JP1987042586A. 1987-02-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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