Semiconductor laser of buried structure
文献类型：专利
| 作者 | KATOU YOSHITAKE |
| 发表日期 | 1988-07-22 |
| 专利号 | JP1988178576A |
| 著作权人 | 日本電気株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser of buried structure |
| 英文摘要 | PURPOSE:To obtain high efficiency and high output while making a high-speed modulation action possible by doping Ti having small diffusion constant to a high resistance current block layer. CONSTITUTION:An active region 11 of a semiconductor laser consists of non- doped InGaAsP (Eg=0.95eV), a p-clad layer 12 consists of InP doped with Zn (1X10cm), a p-cap layer 18 consists of an InGaAsP (Eg=13eV) layer doped with Zn (8X10cm), an n-buffer layer 13 consists of an InP layer doped with S (1X10cm), a high resistance current block layer 14 consists of an InP layer doped with Ti (1X10cm) and a substrate 15 consists of an S-dope InP substrate. Since the impurities doped to the block layer 14 is Ti having small diffusion constant, high-speed modulation with high efficiency and high output is possible. |
| 公开日期 | 1988-07-22 |
| 申请日期 | 1987-01-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67179]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電気株式会社 |
| 推荐引用方式 GB/T 7714 | KATOU YOSHITAKE. Semiconductor laser of buried structure. JP1988178576A. 1988-07-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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