Mixed crystal formation for quantum well
文献类型：专利
| 作者 | MIYAZAWA TAKEO; KAWAMURA YUICHI; MIKAMI OSAMU |
| 发表日期 | 1989-09-08 |
| 专利号 | JP1989225188A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Mixed crystal formation for quantum well |
| 英文摘要 | PURPOSE:To use an N-type substrate used widely to manufacture an optical element and the like by diffusing silicon in an InGaAs/InAlAs quantum well, and mixture crystallizing with Si exhibiting reverse conductivity type to that of Zn in the InGaAs and InAlAs. CONSTITUTION:Silicon(Si) 27 of n-type dopant is diffused in an InGaAs/InAlAs multiplex quantum well 22A, and mixture crystallized with the Si 27 exhibiting reverse conductivity type to that of Zn used heretofore in the InGaAs and InAlAs. The wells 22A at both sides of a stripe are mixture crystallized to become InAlGaAs mixture crystal 29 having a wider energy gap and smaller refractive index than those of a multiplex quantum well active layer 22, thereby forming a buried structure. Accordingly, a clad layer of a gap layer side is formed in N-type with a p-type InP substrate, and Zn diffusion is not necessary to form a p-n junction having a high barrier to a p type region. Thus, an n-type substrate used widely to manufacture an optical element and the like can be used. |
| 公开日期 | 1989-09-08 |
| 申请日期 | 1988-03-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67184]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | MIYAZAWA TAKEO,KAWAMURA YUICHI,MIKAMI OSAMU. Mixed crystal formation for quantum well. JP1989225188A. 1989-09-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。