Semiconductor member for light emitting device
文献类型：专利
| 作者 | INABA FUMIO; ITO HIROMASA; TSUJI MASASHIGE; TADATOMO KAZUYUKI; MIZUYOSHI AKIRA |
| 发表日期 | 1987-06-23 |
| 专利号 | JP1987139364A |
| 著作权人 | INABA FUMIO |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor member for light emitting device |
| 英文摘要 | PURPOSE:To obtain good emitting characteristics of the vertical direction with respect to the substrate by performing epitaxial growth on the outer periphery of a columnar projection provided on a semiconductor substrate so as to have a P-N junction in the direction of vertical disposition of the columnar projection, and emitting in the direction of vertical disposition. CONSTITUTION:A mask layer m1 consisting of a SiO2 layer or the like is provided on a substrate 1', a columnar projection 2 is formed by etching, and after providing a mask layer m2 as necessary, the projection 2 is dipped into a solution nEP, performing the liquid phase epitaxial growth of a first semiconductor layer 2A' consisting of N-type GaAs on the outer periphery of the projection. The projection 2 is dipped into a solution pEP to epitaxially grow a second semiconductor 2B' consisting of P-type GaAs, and the mask layers are removed, obtaining an objective semiconductor member having a P-N junction PN1 in the direction of vertical disposition of the projection. Based on this P-N junction in the direction of vertical disposition of the columnar projection, emission vertical to the substrate can be obtained with an excellent light output-current characteristics. |
| 公开日期 | 1987-06-23 |
| 申请日期 | 1985-12-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67190]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | INABA FUMIO |
| 推荐引用方式 GB/T 7714 | INABA FUMIO,ITO HIROMASA,TSUJI MASASHIGE,et al. Semiconductor member for light emitting device. JP1987139364A. 1987-06-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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