Crystal growth method for ii-vi compound semiconductor
文献类型：专利
| 作者 | YAMAZAKI KOJI |
| 发表日期 | 1991-04-03 |
| 专利号 | JP1991078282A |
| 著作权人 | SEIKO EPSON CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Crystal growth method for ii-vi compound semiconductor |
| 英文摘要 | PURPOSE:To form a semiconductor film having high crystal property at low temperature by epitaxially growing II-VI compound semiconductor, whose grid matches a substrate, on the III-V compound semiconductor substrate by the MOCVD method wherein group II material is used as a specified adduct. CONSTITUTION:A II-VI compound semiconductor, whose grid matches a semiconductor substrate 3, is epitaxially grown on III-V compound semiconductor substrate 3 by a MOCVD device, using an adduct 27 consisting of dimethyl zinc of group II material and dimethyl slenium and H2Se31 and H2S32 of group VI material. by such arrangement, the film of a II-VI compound semiconductor having high crystal property can be grown at a low substrate temperature on the substrate of a III-V compound semiconductor. |
| 公开日期 | 1991-04-03 |
| 申请日期 | 1989-08-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67194]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SEIKO EPSON CORP |
| 推荐引用方式 GB/T 7714 | YAMAZAKI KOJI. Crystal growth method for ii-vi compound semiconductor. JP1991078282A. 1991-04-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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