Integrated type optical semiconductor device
文献类型：专利
| 作者 | KITAMURA MITSUHIRO |
| 发表日期 | 1991-07-09 |
| 专利号 | JP1991159290A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Integrated type optical semiconductor device |
| 英文摘要 | PURPOSE:To obtain a modulator integrated-type single-wavelength semiconductor laser of high performance which is able to execute a modulation comparatively low in chirp, flat in FM modulation characteristics, and effectively applicable to both a direct detection system and a coherent detection system by a method wherein a quantum well layer is provided to an active region. CONSTITUTION:An active region 15 is composed of quantum well semiconductors different from each other number of layers or thickness or both in number of layers and thickness. A large primary modulation can be realized through a very small light absorption loss modulation taking advantage of the gain saturation characteristics of an active layer 2. At this point, a modulation action is accompanied with the modulation of the active layer 2 in carrier density, but a chirp width is made smaller than that of a conventional distributed feedback-type semiconductor laser or a reflection-type semiconductor laser. Furthermore, a comparatively large carrier density modulation can be executed attendant on a very small light absorption loss modulation, a FM characteristic is predominant through a wide range of a frequency by a carrier effect, so that flat FM characteristics can be obtained. By this setup, a single-wavelength semiconductor laser, which is able to execute a single-wavelength operation low in chirp, flat in FM modulation characteristics, and effectively applicable to a coherent system and the like, can be obtained. |
| 公开日期 | 1991-07-09 |
| 申请日期 | 1989-11-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67198]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | KITAMURA MITSUHIRO. Integrated type optical semiconductor device. JP1991159290A. 1991-07-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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