Epitaxial growth method of iii-v or ii-vi compound semiconductor
文献类型：专利
| 作者 | OGAWA JUNKO; AKIMOTO KATSUHIRO; TAMAMURA KOJI; MORI YOSHIFUMI |
| 发表日期 | 1988-07-13 |
| 专利号 | JP1988169721A |
| 著作权人 | ソニー株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Epitaxial growth method of iii-v or ii-vi compound semiconductor |
| 英文摘要 | PURPOSE:To control the self-compensating defect of a III-V or II-VI compound semiconductor by separately controlling the V/III element ratios or VI/II element ratios of elements constituting said compound semiconductor in a P-type or an N-type. CONSTITUTION:On a III-V compound semiconductor, Zn-VAs as the self- compensating defect (an SA center) of a layer such as a P-type layer is decreased with the increase of a V/III element ratio (mol ratio of a group V element to a group III element in a supply gas) in the Zn-VAs, but there is an optimum V/III element ratio in order to minimize the SA center and other defects including the SA center and other defects not identified because other deficits (not identified) are augmented. The same applies to the epitaxial growth of a II-VI compound semiconductor. Accordingly, when a crystal having double hetero-structure for a semiconductor laser is grown by positively making a V/III element ratio or a VI/II element ratio at the time of the growth of a P-type clad layer larger than that at the time of the growth of an N-type clad layer, excellent double hetero-structure having few defects not identified including the self-compensating defects can be grown. |
| 公开日期 | 1988-07-13 |
| 申请日期 | 1987-01-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67201]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ソニー株式会社 |
| 推荐引用方式 GB/T 7714 | OGAWA JUNKO,AKIMOTO KATSUHIRO,TAMAMURA KOJI,et al. Epitaxial growth method of iii-v or ii-vi compound semiconductor. JP1988169721A. 1988-07-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。