Distributed-feedback type semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | NISHIZAWA HIDEAKI; TAKAHASHI MITSUO; SUEMATSU YASUHARU |
| 发表日期 | 1989-03-08 |
| 专利号 | JP1989061081A |
| 著作权人 | SHINGIJUTSU JIGYODAN |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Distributed-feedback type semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To improve a laser device, wherein an outer waveguide is coupled at edge faces of an active waveguide without gaps, by extending the edge faces of a protective layer, and extending the edge faces from the edge faces of the outer waveguide layer on both sides. CONSTITUTION:On a P-type InP substrate 1, a P-type InP buffer layer 2, an InGaAsP active waveguide 3 and an N-type InP protective layer 4 are sequentially grown. A stripe shaped SiN film 5 is formed on the N-type InP protective layer 4. Then etching is performed. A diffraction grating, which is to become a distribution Bragg reflector 6, is formed on the exposed P-type InP buffer layer 2. The InP protective layer 4 is used as a mask, and the InGaAs active waveguide layer 3 is etched from the edge faces toward inside. An N-type InGaAsP outer waveguide layer 7 is grown thereon. The InGaAsP is well turned into a space having an overhang structure. A crystal is continuously grown from the edge faces W of the InGaAsP active waveguide layer 3. |
| 公开日期 | 1989-03-08 |
| 申请日期 | 1987-09-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67202]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHINGIJUTSU JIGYODAN |
| 推荐引用方式 GB/T 7714 | NISHIZAWA HIDEAKI,TAKAHASHI MITSUO,SUEMATSU YASUHARU. Distributed-feedback type semiconductor laser and manufacture thereof. JP1989061081A. 1989-03-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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