Ultraviolet group III-nitride-based quantum well laser diodes
文献类型：专利
| 作者 | KNEISSL, MICHAEL A.; TREAT, DAVID W. |
| 发表日期 | 2005-10-13 |
| 专利号 | US20050224781A1 |
| 著作权人 | PALO ALTO RESEARCH CENTER, INCORPORATED |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Ultraviolet group III-nitride-based quantum well laser diodes |
| 英文摘要 | A pair of undoped spacer layers are provided adjacent to, or near to, a single quantum well aluminum gallium nitride active region. In various exemplary embodiments, the undoped spacer layers are provided between the single quantum well aluminum gallium nitride active region and carrier confinement layers. The undoped spacer layers reduce the threshold current for the laser device and improve the output characteristics. |
| 公开日期 | 2005-10-13 |
| 申请日期 | 2003-12-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67207]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | PALO ALTO RESEARCH CENTER, INCORPORATED |
| 推荐引用方式 GB/T 7714 | KNEISSL, MICHAEL A.,TREAT, DAVID W.. Ultraviolet group III-nitride-based quantum well laser diodes. US20050224781A1. 2005-10-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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