Semiconductor vertical-lateral direction array laser device
文献类型：专利
| 作者 | TAKAMI AKIHIRO; KOKUBO YOSHIHIRO; MATSUBARA HIROSHI |
| 发表日期 | 1992-03-13 |
| 专利号 | JP1992080986A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor vertical-lateral direction array laser device |
| 英文摘要 | PURPOSE:To realize a simple wafer process in which a crystal growth process is carried out only once and the diffusion of impurities and the formation of an insulating film are not executed by a method wherein many oblique grooves are previously provided to a substrate possessed of a plane (100) as a primary face so as to make a plane (-1-1-1) and a (-l-1-1) plane exposed. CONSTITUTION:Oblique grooves are previously provided to a P-type GaAs substrate 2a possessed of a plane (100) as a primary face so as to make a plane (100) and a plane (-1-1-1) exposed. A boundary line 12 of a PN junction is a natural diffusion line of Zinc. Provided that a P-type AlxGa1-xAs clad layer 3 is doped with zinc twice as high in concentration as an N-type AlxGa1-xAs clad layer 5, a doping boundary is made to move as Zinc is diffused by heat during the growth of crystal. At this point, Zinc is diffused faster in a direction (1111) than in a direction (100), so that a PN junction is located inside an active layer 4 on a plane (100) but the diffusion of zinc is made to proceed on a plane (111) until it reaches to the N-type AlxGa1-xAs clad layer 5, and a PN junction is located inside the N-type AlxGa1-xAs clad layer 5. In this case, As the PN junction located inside the active layer 4 is lower than that located inside the clad layer 5 in potential, a laser oscillation takes place in this part but not in the other part. As the active layer 4 is located close to the P-type GaAs substrate 2a in a groove, laser oscillation is prevented from occurring there due to a large loss induced by absorption. |
| 公开日期 | 1992-03-13 |
| 申请日期 | 1990-07-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67224]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | TAKAMI AKIHIRO,KOKUBO YOSHIHIRO,MATSUBARA HIROSHI. Semiconductor vertical-lateral direction array laser device. JP1992080986A. 1992-03-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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