MBE System and semiconductor device fabricated using same
文献类型：专利
| 作者 | TAMAMURA, KOSHI, C/O SONY CORP.; TSUKAMOTO, HIRONORI, C/O SONY CORP.; IKEDA, MASAO, C/O SONY CORP. |
| 发表日期 | 1996-09-18 |
| 专利号 | EP0702101A3 |
| 著作权人 | SONY CORPORATION |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | MBE System and semiconductor device fabricated using same |
| 英文摘要 | A molecular beam epitaxy system having a plurality of chambers which contain at least a first chamber and a second chamber. The first chamber is used to form II-V column compound semiconductor layers not containing Te. The second chamber is used to form II-V column compound semiconductor layers containing at least Te. A semiconductor device having an ohmic characteristics can be fabricated without mixing Te into other layers. |
| 公开日期 | 1996-09-18 |
| 申请日期 | 1995-09-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67229]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORPORATION |
| 推荐引用方式 GB/T 7714 | TAMAMURA, KOSHI, C/O SONY CORP.,TSUKAMOTO, HIRONORI, C/O SONY CORP.,IKEDA, MASAO, C/O SONY CORP.. MBE System and semiconductor device fabricated using same. EP0702101A3. 1996-09-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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