Integrated semiconductor optical amplifier
文献类型：专利
| 作者 | KIRIHARA TOSHIO; UOMI KAZUHISA; ONO TOSHIHIRO; ISHIDA KOJI |
| 发表日期 | 1992-05-22 |
| 专利号 | JP1992149512A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Integrated semiconductor optical amplifier |
| 英文摘要 | PURPOSE:To keep amplification degree obtained for the amount of injected carrier high by intentionally causing side etching only in an optical amplification layer and burying a side etched part by utilizing a mass transport phenomenon. CONSTITUTION:An InGaAsP optical waveguide layer 5, an InP barrier layer 4, an InGaAsP optical amplification layer 3, an InP clad layer 2, and an InGaAsP cap layer 1 are multilayered and grow on an InP substrate 6, then a protective film is attached only to a part which is used as the optical amplifier thereafter and the upper four layers being the rest are removed. Next, the clad layer 2 and the InGaAsP1 are allowed to grow again on a part except the optical amplifier part to which the protective film is attached. Thereafter, the optical amplifier and the optical waveguide are formed with the ordinary technique of lithography and etching. Furthermore, in order to bury both side surfaces of the optical amplifier 3, selective etching is performed to the optical amplifier 3 and the etched part is buried by the mass transport. The buried part is an InP buried layer 7. |
| 公开日期 | 1992-05-22 |
| 申请日期 | 1990-10-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67231]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | KIRIHARA TOSHIO,UOMI KAZUHISA,ONO TOSHIHIRO,et al. Integrated semiconductor optical amplifier. JP1992149512A. 1992-05-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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