Monitoring method for light emitting intensity of semiconductor laser and semiconductor laser device
文献类型：专利
| 作者 | YAMABAYASHI YOSHIAKI; NAKAGAWA SEIJI |
| 发表日期 | 1987-04-15 |
| 专利号 | JP1987081784A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Monitoring method for light emitting intensity of semiconductor laser and semiconductor laser device |
| 英文摘要 | PURPOSE:To simplify the optical circuit in a light transmitting part, by providing a light emitting element and a light receiving element on a single substrate. CONSTITUTION:An N-side electrode 17 is grounded. A positive voltage is supplied to a P-side electrode 16-1 from a power source 18- A negative voltage is supplied to a P-side electrode 16-2 from a power source 18-2. A received-light-output detecting circuit 19 is connected to the power source 18-2. A laser oscillating bias voltage is applied to an active layer 12- The layer is used as a laser element. A bias voltage is applied to an active layer 12-2, which is operated as a light receiving element. When the transmission constants, which are determined by the shapes of waveguides and the refractive indexes of the active layers 12-1 and 12-2 are almost equal, a part of the electric field of the laser light emitted from the active layer 12-1 is coupled to the active layer 12-2 on the light receiving side. The active layers 12-1 and 12-2 are formed as the same active layers. Therefore the light coupled to the active layer 12-2 on the receiving side is absorbed, and an optical current is generated between the P-side electrode 16-2 and the N-side electrode 17. The optical current is measured by the received-light-output detecting current 19. Thus the light emitting intensity of the laser oscillation in the active layer 12-1 can be monitored. |
| 公开日期 | 1987-04-15 |
| 申请日期 | 1985-10-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67239]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | YAMABAYASHI YOSHIAKI,NAKAGAWA SEIJI. Monitoring method for light emitting intensity of semiconductor laser and semiconductor laser device. JP1987081784A. 1987-04-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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