Impurity introduction process by ion implantation
文献类型：专利
| 作者 | NOJIMA SHUNJI; ASAHI HAJIME; KOUMAE ATSUO |
| 发表日期 | 1986-12-11 |
| 专利号 | JP1986280616A |
| 著作权人 | 日本電信電話株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Impurity introduction process by ion implantation |
| 英文摘要 | PURPOSE:To mixed-crystalize the part around hetero junctions as well as to form P-type conductive layer with high quantity by a method wherein semiconductor multiple layered film containing two or more hetero junctions is implanted with F ions in addition to Be ion. CONSTITUTION:An n-Al0.4Ga0.6As clad layer 2, a doped GaAs/Al0.3Ga0.7AsMQW layer 3, an n-Al0.4Ga0.6As clad layer 4, an n-GaAs layer 5 are successively grown on a semiinsulating GaAs substrate 1 by MOVPE process. Next Be ion, F ion are implanted using photoresist as a mask for annealing to form a P conductive layer. Then deposited P-type layer and N-type layer electrode are cleaved to produce laser chips. The P-type electrode layer formed by dual implantation of Be and F ion can be mixed-crystalized to form electrode layers with small resistance. |
| 公开日期 | 1986-12-11 |
| 申请日期 | 1985-06-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67251]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電信電話株式会社 |
| 推荐引用方式 GB/T 7714 | NOJIMA SHUNJI,ASAHI HAJIME,KOUMAE ATSUO. Impurity introduction process by ion implantation. JP1986280616A. 1986-12-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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