Manufacture of semiconductor quantum box structure
文献类型：专利
| 作者 | TAKANO SHINJI |
| 发表日期 | 1990-02-01 |
| 专利号 | JP1990031479A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor quantum box structure |
| 英文摘要 | PURPOSE:To realize a three-dimensional quantum well easily and with good reproducibility by forming a minute etch pit by making use of a thin film having a minute defect. CONSTITUTION:An n-InP buffer layer 20 is laminated on an n-InP substrate 10; after that, an InGaAsP layer 30 containing many crystal defects (dislocations) whose composition deviates slightly from that of a semiconductor is laminated; a laminated structure is formed. This semiconductor is etched by using an HBr-based etchant; extremely minute etch pits 35 are formed on the surface of the semiconductor. In addition, an InGaAs quantum-well active layer 55 is grown on the surface of this laminated structure. After that, an etching operation is executed in a short time by using an H2SO4-based etchant; only the InGaAsP layer in a flat part is removed; InGaAsP is left only inside the holes. Then, a p-InGaAsP guide layer 60, a p-InP clad layer 70 and a P-InGaAsP contact layer 80 are formed; a semiconductor laser is completed. |
| 公开日期 | 1990-02-01 |
| 申请日期 | 1988-07-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67252]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | TAKANO SHINJI. Manufacture of semiconductor quantum box structure. JP1990031479A. 1990-02-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。