Semiconductor laser element and monolithic two-wavelength semiconductor laser device
文献类型：专利
| 作者 | MIYAZAKI, KEISUKE; TATSUMI, MASAKI |
| 发表日期 | 2006-04-06 |
| 专利号 | US20060072641A1 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element and monolithic two-wavelength semiconductor laser device |
| 英文摘要 | In the semiconductor laser element and the monolithic two-wavelength semiconductor laser device, an active layer 6 is formed above an n-type GaAs substrate 1, and a p-type AlGaInP clad layer 8 is formed above the active layer 6. Furthermore, an n-type AlGaInP block layer 13 having a refractive index nearly equal to that of the p-type AlGaInP clad layer 8 is formed on the side of the ridge portion formed on the p-type AlGaInP clad layer 8. |
| 公开日期 | 2006-04-06 |
| 申请日期 | 2005-10-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67259]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | MIYAZAKI, KEISUKE,TATSUMI, MASAKI. Semiconductor laser element and monolithic two-wavelength semiconductor laser device. US20060072641A1. 2006-04-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。