Manufacture of single axial mode laser
文献类型：专利
| 作者 | ISHINO MASATO; SASAI YOICHI; KUBO MINORU |
| 发表日期 | 1988-05-23 |
| 专利号 | JP1988119283A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of single axial mode laser |
| 英文摘要 | PURPOSE:To reduce the deformation of a diffraction grating by melting back and to enable preserving the deep diffraction grating by liquid phase epitaxy in a state that the surface on which the diffraction grating is formed is partially covered. CONSTITUTION:In the case of an InGaAsP/InP system DFB-LD, a diffraction grating 7 is formed on the surface of an optical waveguide layer 4 after an n-InP buffer layer 2, an InGaAsP active layer 3 and an InGaAsP optical waveguide layer 4 are grown by LPE on an n-InP substrate An SiO2 film 8 is deposited on the diffraction grating 7 for covering the grating by leaving a stripe W wide in the direction perpendicular to the pattern of the diffraction grating. A p-InP is grown by LPE on the diffraction grating on which the SiO2 film 8 is partially formed. A solute on the SiO2 film 8 is concentrated in the aperture 11 of the SiO2 film 8 as shown by an arrow 10 by the existence of the SiO2 film 8 and the melting back of the exposed diffraction grating can be restrained by the effective increase of the supersaturation in the aperture. |
| 公开日期 | 1988-05-23 |
| 申请日期 | 1986-11-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67269]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | ISHINO MASATO,SASAI YOICHI,KUBO MINORU. Manufacture of single axial mode laser. JP1988119283A. 1988-05-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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