Radiation-emitting semiconductor diode
文献类型：专利
| 作者 | VAN DER POEL, CAROLUS JOHANNES; VALSTER, ADRIAAN; BOERMANS, MICHAEL JOZEF BERNAD |
| 发表日期 | 1993-06-02 |
| 专利号 | EP0544357A1 |
| 著作权人 | PHILIPS ELECTRONICS N.V. |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Radiation-emitting semiconductor diode |
| 英文摘要 | Radiation-emitting semiconductor diodes are used inter alia in information processing systems as diode lasers or LEDs. Such a radiation-emitting semiconductor diode comprises a active layer situated between two cladding layers, which layers each comprise a mixed crystal of III-V semiconductor materials, atoms of different elements, often having a certain degree of ordering, being present on at least one sublattice. An example is a InGaP/InAlGaP diode laser which emits at 670 nm and is highly suitable for various applications. There is a particular demand for diodes which have a high maximum operating temperature at a given wavelength. According to the invention, the composition of the semiconductor material of the active layer is so chosen that this layer has a compression strain, while the atoms of the different elements have a less orderly distribution at least in the semiconductor material of the active layer. This strongly reduces the string current, while the emission wavelength remains substantially unchanged. In a preferred embodiment, the distribution in the semiconductor materials of the cladding layers is also less orderly, which improves the confinement and thus the temperature dependence characteristics of the starting current. The maximum operating temperature of diode lasers according to the invention is considerably increased owing to a low starting current and a low temperature dependence of this starting current. |
| 公开日期 | 1993-06-02 |
| 申请日期 | 1992-11-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67272]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | PHILIPS ELECTRONICS N.V. |
| 推荐引用方式 GB/T 7714 | VAN DER POEL, CAROLUS JOHANNES,VALSTER, ADRIAAN,BOERMANS, MICHAEL JOZEF BERNAD. Radiation-emitting semiconductor diode. EP0544357A1. 1993-06-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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