Manufacture of high-resistance indium phosphide semiconductor layer
文献类型：专利
| 作者 | KONDO MASATO |
| 发表日期 | 1987-10-08 |
| 专利号 | JP1987230018A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of high-resistance indium phosphide semiconductor layer |
| 英文摘要 | PURPOSE:To obtain an InP layer of sufficiently high concentration by covering a substrate with a crystal plate including P before liquid phase epitaxy of the InP layer and growing the InP layer at a specified temperature after removing said crystal plate. CONSTITUTION:Iron is added in a solution for epitaxial growth as an additional matter. After covering an InP substrate 2 with a crystal plate 4 including P, the crystal plate 4 is removed from the substrate 2 and the solution for epitaxial growth 5 is brought to the substrate 2. Then, an InP layer is grown at a temperature above 800 deg.C. Namely, an InP substrate 2 is put on a boat 1 made of high-purity carbon firstly before the growth and then it is covered with the InP crystal plate 4 for protecting the substrate covers. Next, a slider 3 on the boat 1 is moved by a pushing bar 8 to remove the crystal plate 4 from the substrate 2 and to bring the epitaxial growth solution 5 added with Fe. Then, an InP thin film is grown at a temperature above 800 deg.C. By this growth, an InP thin film having sufficiently high resistance can be obtained. |
| 公开日期 | 1987-10-08 |
| 申请日期 | 1986-03-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67285]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | KONDO MASATO. Manufacture of high-resistance indium phosphide semiconductor layer. JP1987230018A. 1987-10-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。