Semiconductor integrated circuit device
文献类型：专利
| 作者 | HAMAGUCHI HISASHI |
| 发表日期 | 1988-04-06 |
| 专利号 | JP1988076371A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor integrated circuit device |
| 英文摘要 | PURPOSE:To prevent current fluctuation due to light absorption in an active region and to improve stability in operation, by forming a forbidden band with of the active region in a transistor element so that its energy is larger than energy of photons radiated from a luminous element. CONSTITUTION:On a semi-insulating GaAs element 1, a laser element LD is composed of the following units: a n-type GaAs contact layer 12, a n-type AlxGa1-xAs(x=0.3) clad layer 13, a non-doped GaAs active layer 14, a p-type AlxGa1-xAs(x=0.3) clad layer 15, a p-type GaAs contact layer 16, a n-side electrode 17, and a p-side electrode 18. Similarly on the substrate 1, a MES FET element is composed of the following units: a n-type AlyGa1-yAs channel layer 2, a source.drain electrode 3, and a gate electrode 4. This n-type AlyGa1-yAs channel layer 2 is formed to have an Al composition ratio of e.g., 0.4 and forbidden band width of about 92 eV, so that energy of photons in the band width is larger than that of photons in forbidden band width nearly of about 42 eV of the GaAs active layer 14 in the laser element LD. Thus, even if light radiated from the laser element is scattered to become incident to the channel layer 2, current fluctuation due to light absorption in the MES FET element is prevented, so that stable light output can be obtained. |
| 公开日期 | 1988-04-06 |
| 申请日期 | 1986-09-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67291]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | HAMAGUCHI HISASHI. Semiconductor integrated circuit device. JP1988076371A. 1988-04-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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