Semiconductor structure and semiconductor laser device
文献类型：专利
| 作者 | KONDO MASAHIKO |
| 发表日期 | 1991-08-05 |
| 专利号 | JP1991179790A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor structure and semiconductor laser device |
| 英文摘要 | PURPOSE:To enable the manufacture of a semiconductor laser which oscillates in blue or green light of a wavelength of 600nm or below by a method wherein a semiconductor laser is provided with an atomic laser superlattice in which ZnS and ZnTe are alternately laminated at a period of an atomic layer or so. CONSTITUTION:The molecular beams of zinc, sulphur, zinc, sulfur, zinc, and tellurium are made to irradiate a GaAs substrate successively in this sequence to enable a (ZnS)2(ZnTe)1 atomic layer superlattice to grow epitaxially for instance at thick as 1mum to form a clad layer 13. Ammonia is introduced into the clad layer 13 at the same time to make it of a P-type conductivity. An active layer 14 is formed, and a clad layer 15 is formed the same as the clad layer 13, and a molecular beam of aluminum is made to irradiate to make the clad layer 15 of an N-type. Lastly, an N-type GaAs cap layer 16 is grown, then a crystal growth process is finished. A current blocking SiO2 film 17 and resistive electrodes 18 and 19 are provided to the obtained double hetero wafer. The double hetero wafer is formed into a laser chip, and thus a blue light semiconductor laser device can be manufactured. |
| 公开日期 | 1991-08-05 |
| 申请日期 | 1989-12-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67299]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | KONDO MASAHIKO. Semiconductor structure and semiconductor laser device. JP1991179790A. 1991-08-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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