Optoelectronic integrated circuit device
文献类型：专利
| 作者 | KURODA KENICHI; OOTA ATSUSHI |
| 发表日期 | 1987-07-21 |
| 专利号 | JP1987165387A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Optoelectronic integrated circuit device |
| 英文摘要 | PURPOSE:To facilitate forming electrodes of a semiconductor laser part and a driving electronic device part on a same plane and facilitate photolithography by a method wherein a TJS type laser in which an anode and a cathode are provided in a same plane is employed as the semiconductor laser part. CONSTITUTION:After an undoped AlGaAs layer 15, a lower cladding layer 16, an active layer 17, an upper cladding layer 18 and a cap layer 19 are formed over the whole surface of a semi-insulating substrate 14, selective diffusion and driving of Zn are performed to form a TJS type semiconductor laser part 33. parts of the respective layers 15-19 are removed by etching and a part of the semi-insulating substrate 14 is exposed and, on the exposed surface, a high resistance AlGaAs layer 22 and an active layer 23 are selectively laminated in such a manner that the surface of the active layer 23 is in the same level as the surface of the cap layer 19 of the laser part 33 to form an FET part 34. After that, the P-type side electrode 24 and the N-type side electrode 25 of the semiconductor laser part 33 and the drain electrode 26, the gate electrode 27 and the source electrode 28 of the FET part 34 are formed. |
| 公开日期 | 1987-07-21 |
| 申请日期 | 1986-01-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67301]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | KURODA KENICHI,OOTA ATSUSHI. Optoelectronic integrated circuit device. JP1987165387A. 1987-07-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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