Optical semiconductor device and method of manufacturing same
文献类型：专利
| 作者 | SAKATA, YASUTAKA |
| 发表日期 | 2009-04-09 |
| 专利号 | US20090092164A1 |
| 著作权人 | RENESAS ELECTRONICS CORPORATION |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Optical semiconductor device and method of manufacturing same |
| 英文摘要 | The reliability of a buried hetero-structure semiconductor laser is improved by preventing an increase in oscillation threshold current and a decrease in external differential quantum efficiency in cases where the semiconductor laser is energized continuously under conditions of high temperature and high optical output. An optical semiconductor laser has an optical waveguide structure comprising an n-type cladding layer, an active layer and p-type cladding layers, and a current narrowing/blocking structure comprising a p-type blocking layer and an n-type blocking layer, wherein concentration of hydrogen contained in the p-type cladding layers is higher than concentration of hydrogen contained in the p-type blocking layer. |
| 公开日期 | 2009-04-09 |
| 申请日期 | 2008-10-06 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67307]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | RENESAS ELECTRONICS CORPORATION |
| 推荐引用方式 GB/T 7714 | SAKATA, YASUTAKA. Optical semiconductor device and method of manufacturing same. US20090092164A1. 2009-04-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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