Formation of resist pattern
文献类型：专利
| 作者 | ODAKA ISAMU; WAKITA KOICHI; MIKAMI OSAMU |
| 发表日期 | 1989-09-07 |
| 专利号 | JP1989224767A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Formation of resist pattern |
| 英文摘要 | PURPOSE:To easily shift the phase of a diffraction grating by lambda/4 by forming a phase shift pattern on a single-layer resist film which is coated on a wafer and permits image reversal. CONSTITUTION:A positive type resist 2 which allows image reversal is coated on the substrate 1 and is prebaked. The part irradiated with light forms an alkali-soluble layer 2' when a light shielding plate 3 is disposed on the resist film which is not to be exposed in order to form a phase shift region and when the resist is subjected to two beam interference exposing 4 which is capable of making simultaneous exposing in a wide area. Heat is then applied to the resist to convert the alkali-soluble layer 2' to the alkali-insoluble layer 2''. The unexposed part which is not exposed by the light is then converted to the alkali-soluble layer 2' by irradiation of UV rays 5 thereto. The part where the light shielding plate 3 exists thus far is exposed and the part irradiated with the light is converted to the alkali-soluble layer 2' when the light shielding plate 3 is removed and the resist is again subjected to the pattern formation by the two beam interference exposing 4. The pattern shifted by the lambda/4 phase with the edge part of the light shielding plate 3 as a boundary is formed by one time of the developing stage when the resist layer is subjected to development. |
| 公开日期 | 1989-09-07 |
| 申请日期 | 1988-03-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67309]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | ODAKA ISAMU,WAKITA KOICHI,MIKAMI OSAMU. Formation of resist pattern. JP1989224767A. 1989-09-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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