Photo-electron integrated element and manufacture thereof
文献类型：专利
| 作者 | KINOSHITA JUNICHI; MORINAGA MOTOYASU; HIRAYAMA YUZO; SUZUKI NOBUO; NAKAMURA MASARU |
| 发表日期 | 1987-08-20 |
| 专利号 | JP1987190756A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Photo-electron integrated element and manufacture thereof |
| 英文摘要 | PURPOSE:To ensure high dimensional accuracy, and to obtain excellent element characteristics by forming a first clad layer for a light-emitting element and source-drain layers for a field-effect transistor by a common semiconductor layer and shaping an active layer for the light-emitting element and an ohmic contact layer for the field-effect transistor by a common semiconductor layer. CONSTITUTION:A double hetero-junction semiconductor laser with an n-type InP clad layer 41, an undoped GaInAsP active layer 51 and a p-type InP clad layer 7 and an MESFET with an n-type InP operating layer 2, n-type InP drain- source layers 42, 43, ohmic contact layers 52, 53 for source-drain, a gate electrode 12 and ohmic electrodes 111, 112 for the source-drain are formed integrally onto a semi-insulating InP substrate The n-type clad layer 41 for the semiconductor laser and the source-drain layers 42, 43 for the MESFET are shaped by a common n-type InP layer 4. The active layer 51 for the semiconductor layer and the ohmic contact layers 52, 53 for the MESFET are formed by a common GaInAsP layer. |
| 公开日期 | 1987-08-20 |
| 申请日期 | 1986-02-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67310]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | KINOSHITA JUNICHI,MORINAGA MOTOYASU,HIRAYAMA YUZO,et al. Photo-electron integrated element and manufacture thereof. JP1987190756A. 1987-08-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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