Semiconductor laser element and process for producing the same
文献类型：专利
| 作者 | HOSOBA, HIROYUKI; KAN, YASUO |
| 发表日期 | 2003-01-09 |
| 专利号 | US20030007530A1 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element and process for producing the same |
| 英文摘要 | In a semiconductor laser element, an active layer is sandwiched between first-conductivity type and second-conductivity type cladding layers, and a second-conductivity type contact layer is disposed above the second cladding layer with an intermediate bandgap layer interposed between the second cladding layer and the contact layer, the second-conductivity type contact layer having a bandgap different from a bandgap of the second-conductivity type cladding layer, the intermediate bandgap layer having an intermediate bandgap between the bandgaps of the second-conductivity type cladding layer and the second-conductivity type contact layer. The second-conductivity type contact layer has at least a first contact layer, an intermediate second contact layer and a third contact layer stacked in this order and the second contact layer has an impurity density lower than impurity densities of the first and third contact layers. |
| 公开日期 | 2003-01-09 |
| 申请日期 | 2002-06-26 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67312]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | HOSOBA, HIROYUKI,KAN, YASUO. Semiconductor laser element and process for producing the same. US20030007530A1. 2003-01-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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