Semiconductor laser having quantum well structure
文献类型：专利
| 作者 | MATSUSHIMA YUICHI; UKO KATSUYUKI; SAKAI KAZUO |
| 发表日期 | 1989-08-17 |
| 专利号 | JP1989205586A |
| 著作权人 | KOKUSAI DENSHIN DENWA CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser having quantum well structure |
| 英文摘要 | PURPOSE:To enable reduction and high output of threshold current by adding n-type or p-type impurity of specified range at least to a well layer among light emitting layers. CONSTITUTION:An n-type AlInAs layer 2 which becomes a primary clad layer is grown onto an n-type InP substrate Thereafter, a GaInAs 6 which becomes a quantum well and an AlInAs 7 which becomes a barrier layer are formed for 1-10 cycles to form an MQW light emitting layer 3. When the MQW light emitting layer 6 is formed, n-type or p-type impurity is added in a specified quantity at least to the described well layer 6. Then an electrode contact layer 5 and an AlInAs layer 4 which become a secondary clad layer are formed. The specified range of the described impurity is set at 10-10cm, and silicon and beryllium are used as the n-type impurity and the p-type impurity, respectively. |
| 公开日期 | 1989-08-17 |
| 申请日期 | 1988-02-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67318]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KOKUSAI DENSHIN DENWA CO LTD |
| 推荐引用方式 GB/T 7714 | MATSUSHIMA YUICHI,UKO KATSUYUKI,SAKAI KAZUO. Semiconductor laser having quantum well structure. JP1989205586A. 1989-08-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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