Manufacture of distributed feedback type semiconductor laser
文献类型：专利
| 作者 | FURUKAWA RYOZO; SHINOZAKI KEISUKE; WATANABE AKIRA |
| 发表日期 | 1988-12-16 |
| 专利号 | JP1988308990A |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of distributed feedback type semiconductor laser |
| 英文摘要 | PURPOSE:To improve reliability by melting back a GaAs layer through an LPE method and providing a process in which an AlzGa1-zAs optical guide layer, an AlyGa1-yAs active layer, an AlxGa1-xAs upper-side clad layer and a GaAs cap layer are formed onto a louver side clad layer exposed in succession. CONSTITUTION:A GaAs layer 37 is melted back through a liquid-phase epitaxial growth method (an LPE method), and the surface of a lower-side clad layer 35 is exposed. The surface of the lower-side clad layer 35 having a corrugation 33a after the shape of the corrugation 33 of the surface of an N-type GaAs substrate 31 can be exposed. An N-type AlzGa1-zAs optical guide layer 39 is grown onto the N-type AlxGa1-xAs lower-side clad layer 35 so that the surface is flattened through said LPE growth, and an AlyGa1-yAs active layer 41, a P-type AlxGa1-xAs upper-side clad layer 43 and a P-type GaAs cap layer 45 are grown successively from the layer 39 side onto the optical guide layer 39, Accordingly, second crystal growth, the growth of each layer of layers upper than the layer including the optical guide layer, can be conducted excellently, thus acquiring a laser having high reliability. |
| 公开日期 | 1988-12-16 |
| 申请日期 | 1987-06-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67319]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | FURUKAWA RYOZO,SHINOZAKI KEISUKE,WATANABE AKIRA. Manufacture of distributed feedback type semiconductor laser. JP1988308990A. 1988-12-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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