Buried construction distribution reflection type semiconductor laser and its manufacture
文献类型：专利
| 作者 | KOBAYASHI KENICHI; ITAYA YOSHIO |
| 发表日期 | 1984-12-27 |
| 专利号 | JP1984232478A |
| 著作权人 | NIPPON DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Buried construction distribution reflection type semiconductor laser and its manufacture |
| 英文摘要 | PURPOSE:To increase yield of grating manufacture by forming a greater refractive index waveguide layer on the groove of a grooved semiconductor crystal except longer direction and stacking the first clad layer, an active layer, the second clad layer and the third clad layer. CONSTITUTION:A groove is formed on a semiconductor crystal 1 (InP). On the groove, an InGaAsP quaternary crystal is laminated so that the surface of which becomes flat. Then, the quaternary crystal on a part of longer direction of the groove is removed and a grating 20 is formed on a distribution reflection region 40. On the grating 20, the first clad layer 3 (N type InP), an active layer 4 (InGaAsP), an InGaAsP layer which has smaller refractive index and band gap greater than those of an active layer which will become the second clad layer 5, the third clad layer 6 (InP) and a gap layer 7 (InGaAsP) for ohmic contact are stacked one upon another. |
| 公开日期 | 1984-12-27 |
| 申请日期 | 1983-06-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67324]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON DENKI KK |
| 推荐引用方式 GB/T 7714 | KOBAYASHI KENICHI,ITAYA YOSHIO. Buried construction distribution reflection type semiconductor laser and its manufacture. JP1984232478A. 1984-12-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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