Method of liquid-phase epitaxial growth
文献类型：专利
| 作者 | YAJIMA KAZUO; TAKAGI NOBUYUKI; KANEDA KOICHI |
| 发表日期 | 1986-05-12 |
| 专利号 | JP1986093619A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Method of liquid-phase epitaxial growth |
| 英文摘要 | PURPOSE:To prevent impairment of flatness of a GaAs layer, by making a weight ratio of gallium to tellurium in a growing solution of a gallium arsenide layer to be 15/1,000 or more and 35/1,000 or less. CONSTITUTION:A gallium arsenide layer including tellurium as impurities is epitaxially grown in a liquid phase. At this time, a weight ratio of gallium to tellurium in the growing solution of said gallium arsenide layer is made to be 15/1,000 or more and 35/1,000 or less. For example, on an N type GaAs substrate 1, a P type Al0.3Ga0.7As layer 2 and an N type GaAs layer 3 are grown so that each has a thickness of about 0.7mum. Impurities in the N type GaAs layer 3 is Te, and the growing solution has a ratio of Te:Ga=5-3.5mg:1 g. A semiconductor substrate is etched, and a stripe shaped groove 4 is formed so as to reach the substrate An N type Al0.45Ga0.55As clad layer 5, an N type Al0.15Ga0.85As active layer 6, a P type Al0.45Ga0.55As clad layer 7 and P type GaAs cap layer 8 are sequentially grown continuously. Lapping is performed on the substrate A P-side electrode 9 is provided on the cap layer 8, and an N-side electrode 10 is provided on the back surface of the substrate After cleavage and the like, an SML laser element is completed. |
| 公开日期 | 1986-05-12 |
| 申请日期 | 1984-10-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67326]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | YAJIMA KAZUO,TAKAGI NOBUYUKI,KANEDA KOICHI. Method of liquid-phase epitaxial growth. JP1986093619A. 1986-05-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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