Light emitting thyristor element and manufacture thereof
文献类型：专利
| 作者 | ASATA SUSUMU |
| 发表日期 | 1990-07-25 |
| 专利号 | JP1990189975A |
| 著作权人 | 日本電気株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Light emitting thyristor element and manufacture thereof |
| 英文摘要 | PURPOSE:To efficiently detect an input signal and to reduce consumption power while holding a necessary optical output by providing a mesalike structure at least partly in a light absorption/light emitting layer, and providing semiconductor current blocking layers each having larger forbidden band width than the light absorbing light emitting layer at both sides of the mesa. CONSTITUTION:When an element is in an OFF state, carrier density in an n-type gate layer is low. In this case, when a light is input, electron.hole carrier is generated in the n-type gate electrode, and a large element current can flow efficiently. That is, the volume of the n-type gate layer is limited to a mesa 17, and a current flowing to the element is narrowed to the mesa 17 by providing n-type semiconductor current blocking layer 18 at the side of the mesa, and input light is condensed to the mesa 17 by so growing a p-type clad layer 15 as to cover the protrusion of the mesa. Thus, the detecting sensitivity of an input signal is enhanced, and the power consumption of the element is reduced. |
| 公开日期 | 1990-07-25 |
| 申请日期 | 1989-01-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67351]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電気株式会社 |
| 推荐引用方式 GB/T 7714 | ASATA SUSUMU. Light emitting thyristor element and manufacture thereof. JP1990189975A. 1990-07-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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