Herstellungsverfahren eines planaren einmodigen Quantum-well-halbleiterlaser mit Austrittsfenster und Strombegrenzung
文献类型：专利
| 作者 | BEHFAR-RAD ABBAS WAPPINGERS FALLS NEW YORK 12590 US; MEIER HEINZ PETER CH-8800 THALWIL CH; HARDER CHRISTOPH STEPHEN CH-8038 ZURICH CH |
| 发表日期 | 1998-08-13 |
| 专利号 | DE69411493D1 |
| 著作权人 | INTERNATIONAL BUSINESS MACHINES CORP. ARMONK N.Y. US |
| 国家 | 德国 |
| 文献子类 | 授权发明 |
| 其他题名 | Herstellungsverfahren eines planaren einmodigen Quantum-well-halbleiterlaser mit Austrittsfenster und Strombegrenzung |
| 英文摘要 | Making a semiconductor laser having at least a quantum well structure including layers deposited on a semiconductor substrate comprises: (a) forming one the substrate a set of laser layers of a base chemical compsn. and including at least a substitutional element, the laser layers including at least a lower cladding layer having a first concn. value of the substitutional element and a lower graded layer having a chemical compsn. varying from a second concn. value of the substitutional element a% a lower interface of the lower graded layer to a third concn. value of the substitutional element at an upper interface of the lower graded layer; (b) forming an upper graded layer on the quantum well layer; (c) forming an upper graded layer on the quantum well layer of a chemical compsn. having a concn. value of the substitutional element varying from a fifth concn. value at a lower interface of the upper graded layer with the quantum well layer to a sixth concn. value at an upper interface of the upper graded layer; (d) depositing an upper cladding layer of a seventh concn. value of the substitutional element above the upper graded layer and a contact layer of an eighth concn. value above the upper cladding layer; (e) sepg. a laser structure including an active area from a remainder portion of the substrate, thereby forming the semiconductor laser. |
| 公开日期 | 1998-08-13 |
| 申请日期 | 1994-09-23 |
| 状态 | 未确认 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67355]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | INTERNATIONAL BUSINESS MACHINES CORP. ARMONK N.Y. US |
| 推荐引用方式 GB/T 7714 | BEHFAR-RAD ABBAS WAPPINGERS FALLS NEW YORK 12590 US,MEIER HEINZ PETER CH-8800 THALWIL CH,HARDER CHRISTOPH STEPHEN CH-8038 ZURICH CH. Herstellungsverfahren eines planaren einmodigen Quantum-well-halbleiterlaser mit Austrittsfenster und Strombegrenzung. DE69411493D1. 1998-08-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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