Iii-nitride light emitting diodes with tunnel junctions wafer bonded to a conductive oxide and having optically pumped layers
文献类型：专利
| 作者 | MUGHAL, ASAD J.; KOWSZ, STACY J.; FARRELL, ROBERT M.; YONKEE, BENJAMIN P.; YOUNG, ERIN C.; PYNN, CHRISTOPHER D.; MARGALITH, TAL; SPECK, JAMES S.; NAKAMURA, SHUJI; DENBAARS, STEVEN P. |
| 发表日期 | 2017-08-10 |
| 专利号 | WO2017136832A1 |
| 著作权人 | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
| 国家 | 世界知识产权组织 |
| 文献子类 | 发明申请 |
| 其他题名 | Iii-nitride light emitting diodes with tunnel junctions wafer bonded to a conductive oxide and having optically pumped layers |
| 英文摘要 | A III-nitride optoelectronic device includes at least one n-type layer, an active region grown on or above the n-type layer, at least one p-type layer grown on or above the active region, and a tunnel junction grown on or above the p-type layer. A conductive oxide may be wafer bonded on or above the tunnel junction, wherein the conductive oxide comprises a transparent conductor and may contain light extraction features on its non-bonded face. The tunnel junction also enables monolithic incorporation of electrically-injected and optically-pumped III-nitride layers, wherein the optically-pumped III-nitride layers comprise high-indium-content III-nitride layers formed as quantum wells (QWs) that are grown on or above the tunnel junction. The optically-pumped high-indium-content III-nitride layers emit light at a longer wavelength than the electrically-injected III-nitride layers. |
| 公开日期 | 2017-08-10 |
| 申请日期 | 2017-02-06 |
| 状态 | 未确认 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67366]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
| 推荐引用方式 GB/T 7714 | MUGHAL, ASAD J.,KOWSZ, STACY J.,FARRELL, ROBERT M.,et al. Iii-nitride light emitting diodes with tunnel junctions wafer bonded to a conductive oxide and having optically pumped layers. WO2017136832A1. 2017-08-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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